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| Semiconductor MCTG35P60F1 35A, 600V MOS Controlled Thyristor (MCT) Package JEDEC STYLE TO-247 o April 1999 PROC WN S ITHDRA DESIGN ART W P NO NEW EP-Type SOLET ESS OB Features * 35A, -600V * VTM = -1.3V(Maximum) at I = 35A and +150 C * 800A Surge Current Capability * 800A/s di/dt Capability * MOS Insulated Gate Control * 50A Gate Turn-Off Capability at +150oC A K G Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. PART NUMBER INFORMATION PART NUMBER MCTG35P60F1 PACKAGE TO-247 BRAND M35P60F1 K Symbol G A NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTG35P60F1 -600 +5 60 35 800 50 20 25 See Figure 11 800 178 1.43 -55 to +150 260 UNITS V V A A A A V V A/s W W/oC oC oC Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Continuous Cathode Current (See Figure 2) TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC = +115oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Non-Repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (0.063" (1.6mm) from case for 10s) NOTE: IK25 IK115 IKSM IKC VGA VGAM dv/dt di/dt PT TJ, TSTG TL 1. Maximum Pulse Width of 250s (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1999 File Number 3602.5 2-2 Specifications MCTG35P60F1 Electrical Specifications PARAMETER Peak Off-State Blocking Current TC = +25oC, Unless Otherwise Specified SYMBOL IDRM TEST CONDITIONS VKA = -600V, VGA = +18V TC = +150oC TC = +25oC TC = +150oC TC = +25oC TC = +150oC TC = +25oC MIN TYP 5 MAX 1.5 50 2 50 1.35 1.4 100 UNITS mA A mA A V V nA nF Peak Reverse Blocking Current IRRM VKA = +5V VGA = +18V On-State Voltage VTM IK = IK115, VGA = -10V VGA = 20V VKA = -20V, TJ = +25oC VGA = +18V L = 200H, IK = IK115 RG = 1, VGA = +18V, -7V TJ = +125oC VKA = -300V Gate-Anode Leakage Current Input Capacitance IGAS CISS Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy Thermal Resistance tD(ON)I tRI tD(OFF)I tFI EOFF RJC - 140 180 640 1.1 5.6 0.6 1.4 0.7 ns ns ns s mJ oC/W Typical Performance Curves 100 IK, DC CATHODE CURRENT (A) 50 IK, CATHODE CURRENT (A) 30 20 10 5 3 2 1 0 0.5 1.0 1.5 VTM, CATHODE VOLTAGE (V) 2.0 TJ = +150oC TJ = -40oC TJ = +25oC PULSE TEST PULSE DURATION = 250s DUTY CYCLE < 2% 100 90 80 70 60 50 40 30 20 10 0 20 30 40 50 60 70 80 90 100 110 120 130 140 150 TC, CASE TEMPERATURE (oC) PACKAGE LIMIT FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE (TYPICAL) FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT 2-3 MCTG35P60F1 Typical Performance Curves (Continued) TJ = +150oC, RG = 1, L = 200H 200 175 150 125 VKA = -300V 100 75 50 VKA = -200V tD(OFF)I, TURN-OFF DELAY (ns) tD(ON)I, TURN-ON DELAY (ns) 1100 1000 900 800 700 600 500 400 VKA = -200V VKA = -300V TJ = +150oC, RG = 1, L = 200H 0 10 20 30 40 IK, CATHODE CURRENT (A) 50 60 0 10 20 30 40 IK, CATHODE CURRENT (A) 50 60 FIGURE 3. TURN-ON DELAY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1, L = 200H FIGURE 4. TURN-OFF DELAY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1, L = 200H 300 250 tRI, RISE TIME (ns) 200 150 100 50 0 1.5 tFI, FALL TIME (s) VKA = -200V 1.25 VKA = -200V VKA = -300V 1 VKA = -300V 0.75 0.5 0 10 20 30 40 50 60 IK, CATHODE CURRENT (A) 0 10 20 30 40 50 60 IK, CATHODE CURRENT (A) FIGURE 5. TURN-ON RISE TIME vs CATHODE CURRENT (TYPICAL) FIGURE 6. TURN-OFF FALL TIME vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1, L = 200H EOFF, TURN-OFF SWITCHING LOSS (mJ) EON, TURN-ON SWITCHING LOSS (mJ) 2 1 VKA = -300V 0.5 VKA = -200V TJ = +150oC, RG = 1, L = 200H 10 5 VKA = -300V VKA = -200V 1 0.5 0.1 0.1 0 10 30 40 20 IK, CATHODE CURRENT (A) 50 60 0 10 30 40 20 IK, CATHODE CURRENT (A) 50 60 FIGURE 7. TURN-ON ENERGY LOSS vs CATHODE CURRENT (TYPICAL) FIGURE 8. TURN-OFF ENERGY LOSS vs CATHODE CURRENT (TYPICAL) 2-4 MCTG35P60F1 Typical Performance Curves (Continued) fMAX, MAX OPERATING FREQUENCY (kHz) 100 50 30 20 10 5 3 2 1 fMAX1 = 0.05 / tD(OFF)I fMAX2 = (PD - PC) / ESWITCH PD: ALLOWABLE DISSIPATION PC: CONDUCTION DISSIPATION (PC DUTY FACTOR = 50%) RJC = 0.6oC/W 5 10 30 50 20 IK, CATHODE CURRENT (A) 100 VKA = -300V VKA = -200V TC = +115oC, L = 200H PEAK CATHODE CURRENT (A) 60 50 40 30 20 10 0 0 -500 -300 -400 -100 -200 VKA, PEAK TURN OFF VOLTAGE (V) -600 TURN-OFF SAFE OPERATING AREA TJ = +150oC, VGA = 18V, L = 100H FIGURE 9. OPERATING FREQUENCY vs CATHODE CURRENT (TYPICAL) FIGURE 10. TURN-OFF CAPABILITY vs ANODE-CATHODE VOLTAGE 200 CS = 0.1F, TJ = +150oC 100 VSPIKE, SPIKE VOLTAGE (V) 50 CS = 0.1F, TJ = +25oC CS = 1F, TJ = +150oC -725 VDRM, BREAKDOWN VOLTAGE (V) -700 -675 -650 -625 -600 -575 -550 -525 -500 -475 -450 -425 0.1 TJ = +150oC, VGA = 18V 20 10 CS = 2F, TJ = +150oC 5 CS = 1F, TJ = +25oC CS = 2F, TJ = +25oC 1 10 100 dv/dt (V/s) 1000 10000 2 0 5 10 15 20 25 di/dt (A/s) 30 35 40 FIGURE 11. BLOCKING VOLTAGE vs dv/dt FIGURE 12. SPIKE VOLTAGE vs di/dt (TYPICAL) Operating Frequency Information Operating frequency information for a typical device (Figure 9) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs cathode current (IAK) plots are possible using the information shown for a typical unit in Figure 3 to Figure 8. The operating frequency plot (Figure 9) of a typical device shows fMAX1 or fMAX2 whichever is lower at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (tD(ON)I + tD(OFF)I). tD(ON)I + tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(ON)I is defined as the 10% point of the leading edge of the input pulse and the point where the cathode current rises to 10% of its maximum value. tD(OFF)I is defined as the 90% point of the trailing edge of the input pulse and the point where the cathode current falls to 90% of its maximum value. Device delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC) / (EON+EOFF). The allowable dissipation (PD) is defined by PD = (TJMAX - TC) / RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) and the conduction losses (PC) are approximated by PC = (VAK * IAK) / (duty factor/100). EON is defined as the sum of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the anodecathode voltage equals saturation voltage (VAK = VTM). EOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the cathode current equals zero (IK = 0). 2-5 MCTG35P60F1 Test Circuits VG 200H RURG3060 + - IK VK 500 + 10k CS DUT 4.7k IK 20V DUT + FIGURE 13. SWITCHING TEST CIRCUIT FIGURE 14. VSPIKE TEST CIRCUIT MAXIMUM RISE AND FALL TIME OF VG IS 200ns VG 10% 90% VG di/dt -VKA 90% IK 10% tD(OFF)I tFI tRI tD(ON)I IK VSPIKE VTM VAK FIGURE 15. SWITCHING TEST WAVEFORMS FIGURE 16. VSPIKE TEST WAVEFORMS Handling Precautions for MCTs MOS Controlled Thyristors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. MCT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as *"ECCOSORB LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGA. Exceeding the rated VGA can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. Trademark Emerson and Cumming, Inc. 2-6 + VA 9V - |
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